The world's first sub-10 nanometer Germainium gate-all-around (GAA) nanowire transistors accompany the world's lowest source/drain contacts claims the International Micro-Electronics Center (Imec Intl., Belgium) at this month's 2017 Symposia on VLSI Technology and Circuits in Kyoto, Japan.
from EETimes: http://www.eetimes.com/document.asp?doc_id=1331888&_mc=RSS_EET_EDT
No comments:
Post a Comment