Tuesday, June 13, 2017

Germanium Nanowire Transistors

The world's first sub-10 nanometer Germainium gate-all-around (GAA) nanowire transistors accompany the world's lowest source/drain contacts claims the International Micro-Electronics Center (Imec Intl., Belgium) at this month's 2017 Symposia on VLSI Technology and Circuits in Kyoto, Japan.

from EETimes: http://www.eetimes.com/document.asp?doc_id=1331888&_mc=RSS_EET_EDT

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